| Sign In | Join Free | My futurenowinc.com |
|
Brand Name : original
Model Number : SI7938DP-T1-GE3
Certification : original
Place of Origin : original
MOQ : 1
Price : negotiation
Payment Terms : T/T
Supply Ability : 100,000
Delivery Time : 1-3working days
Packaging Details : carton box
Configuration : 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) : 40 V
Current - Continuous Drain (Id) @ 25°C : 60A
Rds On (Max) @ Id, Vgs : 5.8mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 20V
Power - Max : 46W
SI7938DP-T1-GE3 Mosfet Array 40V 60A 46W Surface Mount PowerPAK® SO-8 Dual
Specifications of SI7938DP-T1-GE3
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 18.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 20V |
| Power - Max | 46W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Base Product Number | SI7938 |
Features of SI7938DP-T1-GE3
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
Applications of SI7938DP-T1-GE3
• POL
• DC/DC
Environmental & Export Classifications of SI7938DP-T1-GE3
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |

|
|
SI7938DP-T1-GE3 Mosfet Array 40V 60A 46W Surface Mount PowerPAK® SO-8 Dual Images |